| 1. | Surface metallization and welding of aluminum nitride ceramic
陶瓷的薄膜金属化及其与金属的焊接研究 |
| 2. | The research progress of aluminum nitride nanocrystals and nanowires
氮化铝纳米晶和纳米线的研究进展 |
| 3. | Aluminum ( al ) and aluminum nitride ( aln ) thin films have many advantages
铝及铝的化合物具有许多优良的性质。 |
| 4. | The improved neural network is applied in study of the relationship between reaction parameters of electroless plating nickel in the process of the metallization of aluminum nitride and the adhesion strength between the metal layer and the substrate
为得到较大的氮化铝金属化层粘附力，运用基于稳健估计的神经网络研究氮化铝金属化中化学镀镍的反应参数与金属层粘附力的关系。 |
| 5. | It ' s a method to realize system integration . the hdi substrate is critical to mcm . aluminum nitride ( a1n ) has been considered as a material for ceramic packaging in view of the recent trends in the semiconductor industry toward higher speed , power dissipation and packaging density
Mcm还能够实现电子系统的小型化、高密度化，是实现系统集成的重要途径，在mcm中高密度布线的多层基板技术是实现高密度封装的关键。 |
| 6. | Three kinds of different methods , namely anode oxidation , micro - arc oxidation and dc reactive magnetron sputtering , were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film
本文分别采用阳极氧化法、微弧氧化法和磁控反应溅射沉积氮化铝薄膜的方法对功率电子器件用金属铝基板表面进行绝缘化处理。 |
